BiAlO2S is an experimental bismuth aluminum oxysulfide compound belonging to the family of mixed-anion semiconductors that combine oxide and sulfide chemistry. This material is primarily investigated in research settings for optoelectronic and photocatalytic applications, where its tunable bandgap and anion engineering potential offer advantages over conventional binary semiconductors like BiVO4 or ZnS in visible-light-responsive systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.800 | eV | — | ||
Magnetic Moment(μB) | -0.0000124 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7600 | eV/atom | — |