BiAlN3 is an experimental ternary nitride compound combining bismuth, aluminum, and nitrogen, representing an emerging material in the wide-bandgap semiconductor and advanced ceramics family. Research into BiAlN3 focuses on potential applications in high-temperature electronics, ultraviolet optoelectronics, and wear-resistant coatings, leveraging the hardness of nitride ceramics combined with bismuth's unique electronic properties; however, this material remains primarily in the research phase with limited industrial deployment compared to established alternatives like AlN or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.313 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.440 | eV/atom | — |