Bi8O12 is a bismuth oxide compound belonging to the semiconductor ceramics class, characterized by a layered crystal structure with potential applications in electronic and photonic devices. This material is primarily of research and development interest rather than established in high-volume production, with investigations focusing on its electrical conductivity, optical properties, and thermal stability for next-generation device applications. The bismuth oxide family offers advantages in specific niche applications where bismuth's unique electronic properties and non-toxic profile provide benefits over traditional semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,574.8 | ksi | — | ||
Shear Modulus(G) | 5,158.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.189 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.364 | eV/atom | — |