Bi4Se3N2 is a bismuth selenide nitride ceramic compound that combines bismuth, selenium, and nitrogen in a layered crystal structure. This is an experimental material primarily of interest in condensed matter physics and materials research rather than established industrial production. The material family is being investigated for potential thermoelectric and electronic applications, leveraging bismuth chalcogenides' known band structure properties combined with nitride strengthening, though practical engineering applications remain largely in the research phase.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.065 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2900 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 20.79 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2912 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.05749 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data