Bi₄W₂O₁₂ is a mixed-metal oxide semiconductor composed of bismuth and tungsten, belonging to the family of polyoxometalate-related compounds and layered perovskite materials. This is primarily a research material investigated for photocatalytic and electrocatalytic applications, valued for its narrow bandgap and layered crystal structure that facilitate charge separation. Industrial adoption remains limited, but the material shows promise as an alternative to conventional photocatalysts in environmental remediation and energy conversion, with potential advantages in visible-light responsiveness and compositional tunability compared to single-metal oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.276 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.923 | eV/atom | — |