Bi₄Te₂I₂ is a mixed halide-chalcogenide semiconductor compound combining bismuth, tellurium, and iodine elements. This is a research-stage material being investigated for thermoelectric and optoelectronic applications, representing an emerging class of layered semiconductors with tunable bandgaps and potential for enhanced charge carrier mobility through halide substitution.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,429.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,814 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01220 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2580 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data