Bi₄Te₂I₂ is a mixed halide-chalcogenide semiconductor compound combining bismuth, tellurium, and iodine elements. This is a research-stage material being investigated for thermoelectric and optoelectronic applications, representing an emerging class of layered semiconductors with tunable bandgaps and potential for enhanced charge carrier mobility through halide substitution.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23.64 | GPa | — | ||
Shear Modulus(G) | 12.51 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01220 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2580 | eV/atom | — |