Bi₄Se₂O₁₂ is a bismuth selenate oxide compound belonging to the mixed-valence metal oxide semiconductor family. This is a research-phase material studied primarily for its electronic and photonic properties rather than established industrial production. The compound is of interest in solid-state electronics, photocatalysis, and thermoelectric applications due to the favorable band structure and thermal properties typical of bismuth-based oxides, positioning it as a candidate material for next-generation energy conversion and environmental remediation technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.098 | eV/atom | — |