Bi₄S₈ is a bismuth sulfide compound semiconductor belonging to the metal chalcogenide family, characterized by layered crystal structure and mixed-valence bismuth chemistry. This material is primarily of research interest for optoelectronic and thermoelectric applications, where its narrow bandgap and anisotropic properties offer potential advantages in infrared detection, photovoltaic devices, and solid-state cooling systems. While not yet widely commercialized, Bi₄S₈ and related bismuth chalcogenides represent an emerging platform for low-toxicity alternatives to lead-based semiconductors and for exploring band structure engineering in quasi-2D materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.16 | GPa | — | ||
Shear Modulus(G) | 22.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.170 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3670 | eV/atom | — |