Bi₄S₄I₄ is a layered bismuth chalcohalide semiconductor composed of bismuth, sulfur, and iodine elements. This is a research-phase compound that belongs to the family of mixed-halide and chalcogenide semiconductors, which are actively investigated for optoelectronic and photovoltaic applications due to their tunable bandgaps and potential lower toxicity compared to lead-based perovskites. The material's layered crystal structure and composition make it a candidate for next-generation thin-film solar cells, photodetectors, and light-emitting devices, though it remains largely in experimental development stages rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.83 | GPa | — | ||
Shear Modulus(G) | 11.34 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.767 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4650 | eV/atom | — |