Bi₄S₄Br₄ is a mixed-halide bismuth chalcogenide semiconductor compound combining bismuth, sulfur, and bromine in a layered crystal structure. This is primarily a research material being investigated for optoelectronic and photovoltaic applications, particularly where tunable band gap and anisotropic electronic properties are valuable. The mixed halide-chalcogenide composition represents an emerging class of materials with potential advantages in perovskite-alternative solar cells, photodetectors, and quantum device platforms where conventional semiconductors face limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.71 | GPa | — | ||
Shear Modulus(G) | 12.31 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.968 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6120 | eV/atom | — |