Bi4 O3 F7
semiconductorBi₄O₃F₇ is an oxyfluoride semiconductor compound combining bismuth oxide with fluorine, belonging to the family of mixed-anion materials that leverage both ionic and covalent bonding to engineer electronic properties. This compound is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where the fluorine substitution modulates the bandgap and crystal structure relative to conventional bismuth oxides, offering potential advantages in visible-light-driven catalysis and UV absorption. Engineers and materials researchers consider oxyfluorides like Bi₄O₃F₇ when conventional single-oxide semiconductors lack sufficient photocatalytic activity or when bandgap tuning via anion doping is critical to application performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |