Bi3In4S10

semiconductor

· Bi3In4S10

Bi₃In₄S₁₀ is a ternary chalcogenide semiconductor compound combining bismuth, indium, and sulfur elements. This material is primarily of research and exploratory interest rather than established in high-volume manufacturing; it belongs to the family of layered sulfide semiconductors being investigated for optoelectronic and photovoltaic applications where tunable bandgap and potential for heterojunction devices are sought.

thin-film photovoltaicsoptoelectronic devicesphotodetectorsthermoelectric researchmaterials screening for energy conversionlaboratory/experimental applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.420	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Bi3In4S10

Electrical Properties

Regulatory Screening

Environmental

Export Control