Bi3I4O13F3

semiconductor

· Bi3I4O13F3

Bi3I4O13F3 is a mixed-valence bismuth iodide oxide fluoride compound belonging to the class of complex inorganic semiconductors with layered or framework structures. This is a research-stage material rather than an established commercial product; it combines bismuth halide chemistry with oxide and fluoride ligands, a composition family being explored for optoelectronic and photovoltaic applications due to bismuth's high atomic number and strong spin-orbit coupling effects. The fluorine and iodine co-substitution may offer tunable band gaps and enhanced photostability compared to simpler bismuth halide perovskite alternatives, making it of interest in emerging semiconductor device research.

perovskite-alternative photovoltaicslead-free semiconductorsoptoelectronic devicesphotocatalysis researchX-ray detectionmaterials screening for thin-film applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Bi3I4O13F3

Electrical Properties

Regulatory Screening

Environmental

Export Control