Bi2TeSe2 is a layered bismuth chalcogenide ceramic compound belonging to the family of topological materials and narrow-bandgap semiconductors. This material is primarily investigated in research contexts for thermoelectric and optoelectronic applications, where its layered crystal structure and electronic properties make it relevant for solid-state energy conversion and advanced photonic devices. Its weak interlayer bonding distinguishes it from conventional ceramics and positions it as a candidate for exfoliated thin-film applications in next-generation electronics and quantum materials research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,074.9 | ksi | — | ||
Exfoliation Energy(Eexf) | 71.99 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 3,203.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2682 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2950 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 109.4 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -207.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3656 | eV/atom | — |