Bismuth telluride (Bi₂Te₃) is a narrow-bandgap semiconductor and the most widely used thermoelectric material at room temperature, prized for direct conversion between thermal and electrical energy. It is the material of choice for thermoelectric cooling modules, power generation from waste heat, and temperature sensing applications across industrial, automotive, and consumer electronics sectors. Engineers select Bi₂Te₃ over alternatives because of its superior figure of merit near ambient conditions, established manufacturing processes, and proven reliability in applications requiring precise thermal management without moving parts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 15.01 | GPa | DFT | ||
| ↳ | 31.42 | GPa | DFT · OptB88vdW | ||
| ↳ | 15.29 | GPa | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 3.729 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | DFT · PBE | ||
Exfoliation Energy(Eexf) | 250.8 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.2500 | - | DFT · OptB88vdW | ||
| ↳ | 0.2049 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 10.85 | GPa | DFT | ||
| ↳ | 20.97 | GPa | DFT · OptB88vdW | ||
| ↳ | 11.23 | GPa | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 4.017 | W/(m·K) | Measured · 27°C | ||
| ↳ | 4.017 | W/(m·K) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.813 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2500 | eV | Measured | ||
| ↳ | 0.3510 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr) | 115.6 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 35.24 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.1500 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.2133 | me | DFT · OptB88vdW · 27°C | ||
Electrical Conductivity(σ) | 2,222.2 | S/cm | Measured · 27°C | ||
Electrical Resistivity(ρe) | 0.00000450 | Ω·m | Measured · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)3 entries | 0.00673 | W/(m·K²) | Measured · 27°C | ||
| ↳ | 0.00317 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00295 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)3 entries | -174 | μV/K | Measured · 27°C | ||
| ↳ | -180.8 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 199.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Thermoelectric Figure of Merit(zT) | 0.5025 | - | Measured · 27°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2469 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | 0.00814 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.1631 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data