Bi₂Te₂Se is a layered chalcogenide semiconductor belonging to the bismuth telluride family, engineered with partial selenium substitution to tune electronic and thermal properties. This material is investigated primarily for thermoelectric energy conversion applications where it can convert temperature gradients directly into electrical voltage, and for potential topological properties in nanostructured or thin-film forms. Compared to unsubstituted Bi₂Te₃, the selenium incorporation modifies the bandgap and carrier concentration, making it relevant for mid-temperature thermoelectric devices and emerging quantum materials research where band topology may be exploited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13.79 | GPa | — | ||
Exfoliation Energy(Eexf) | 70.53 | meV/atom | — | ||
Shear Modulus(G) | 9.744 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.425 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3000 | eV | — | ||
| ↳ | 0.2300 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 90.06 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -105.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3113 | eV/atom | — |