Bi2SeI2O11

semiconductor

· Bi2SeI2O11

Bi2SeI2O11 is a mixed-halide bismuth selenide oxide semiconductor compound combining bismuth, selenium, iodine, and oxygen in a layered crystal structure. This is a research-phase material being explored in solid-state electronics and photonics, where its mixed-anion composition is designed to engineer band gaps and carrier transport properties beyond what single-anion bismuth compounds offer. The material family shows potential for photovoltaic devices, photodetectors, and thermoelectric applications where compositional tuning via halide substitution provides an advantage over conventional semiconductors.

photovoltaic devices (research)photodetectorsthermoelectric applicationsoptoelectronics (experimental)band gap engineeringsolid-state electronics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Bi2SeI2O11

Electrical Properties

Regulatory Screening

Environmental

Export Control