Bi2PbSe4 is a layered bismuth-lead selenide ceramic compound belonging to the class of mixed metal chalcogenides. This material is primarily of research interest for thermoelectric and optoelectronic applications, where its layered crystal structure and moderate exfoliation energy suggest potential for creating two-dimensional nanosheets or thin-film devices. The combination of heavy metal elements (bismuth and lead) with selenium creates a system with potential band gap engineering capabilities, making it relevant to emerging technologies in energy conversion and semiconductor device development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 48.72 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.540 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4440 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 96.41 | - | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -107.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00140 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4575 | eV/atom | — |