Bismuth oxide (Bi₂O₃) is a semiconducting ceramic compound widely employed in optoelectronic and photocatalytic applications, particularly in visible-light-responsive systems where its narrow bandgap makes it suitable for light absorption and charge generation. In industry, it serves as a key material in photocatalysts for water purification and pollutant degradation, in optical coatings, and as a dopant or active phase in advanced ceramics and thin-film devices. Engineers select Bi₂O₃ over traditional wide-bandgap semiconductors when visible-light sensitivity and relatively high density are advantageous, though its stability and performance typically benefit from structural modification or composite integration to enhance photocatalytic efficiency and reduce recombination losses.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 7,902.6 | ksi | DFT | ||
| ↳ | 10,574.7 | ksi | DFT · OptB88vdW | ||
| ↳ | 7,785.2 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.8900 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Exfoliation Energy(Eexf) | 221.4 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.3000 | - | DFT · OptB88vdW | ||
| ↳ | 0.2640 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 4,333.2 | ksi | DFT | ||
| ↳ | 5,159 | ksi | DFT · OptB88vdW | ||
| ↳ | 4,367.1 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2980 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 2.860 | eV | Measured | ||
| ↳ | 0.000 | eV | DFT · PBE | ||
| ↳ | 2.189 | eV | DFT · OptB88vdW | ||
| ↳ | 3.398 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 42.19 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.083 | - | DFT · OptB88vdW | ||
| ↳ | 5.123 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.8833 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.897 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00193 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00105 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -245.9 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 319.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 1.720 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2604 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)3 entries | -0.8140 | eV/atom | DFT | ||
| ↳ | -1.103 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.183 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data