Bi₂Te₄Br₈ is a bismuth telluride bromide compound belonging to the layered halide perovskite family of semiconductors, currently in the research and development phase rather than established commercial production. This material is of interest in the emerging field of halide perovskite semiconductors, where bismuth-based compounds are explored for their potential in optoelectronic and thermoelectric applications as alternatives to lead-based perovskites. The bromide substitution and mixed-halide composition typical of this class may offer tunable bandgap and thermal properties, though the specific performance profile and industrial viability of this particular composition remain subjects of active investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,435 | ksi | — | ||
Shear Modulus(G) | 814.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8977 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4770 | eV/atom | — |