Bi₂Sn₁Te₄ is a bismuth-tin-telluride compound semiconductor belonging to the chalcogenide family, related to established thermoelectric materials like Bi₂Te₃. This composition represents a doped or alloyed variant in the Bi-Sn-Te system, engineered to optimize thermoelectric performance by tuning carrier concentration and phonon scattering through tin substitution. The material is primarily of research and development interest for thermoelectric applications where improved figure-of-merit or operational temperature range is sought compared to the parent Bi₂Te₃ compound.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00730 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2610 | eV/atom | — |