Bi₂Se₃ is a layered chalcogenide semiconductor compound belonging to the family of topological insulators, characterized by a bismuth diselenide crystal structure with significant anisotropy between its basal planes and c-axis. This material is primarily of research and emerging technology interest, with applications in thermoelectric cooling devices, topological quantum computing, and next-generation infrared detectors, where its unique electronic band structure and strong spin-orbit coupling offer advantages over conventional semiconductors for specific niche applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,255.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,277.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05810 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4040 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data