Bi₂Se₃ is a layered chalcogenide semiconductor compound belonging to the family of topological insulators, characterized by a bismuth diselenide crystal structure with significant anisotropy between its basal planes and c-axis. This material is primarily of research and emerging technology interest, with applications in thermoelectric cooling devices, topological quantum computing, and next-generation infrared detectors, where its unique electronic band structure and strong spin-orbit coupling offer advantages over conventional semiconductors for specific niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.23 | GPa | — | ||
Shear Modulus(G) | 22.60 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05810 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4040 | eV/atom | — |