Bi₂Pb₁Se₄ is a mixed-metal selenide semiconductor compound combining bismuth, lead, and selenium in a layered structure. This material belongs to the family of narrow-bandgap semiconductors and is primarily of research interest for thermoelectric and optoelectronic applications, where the combination of heavy elements and selenide chemistry offers potential for efficient charge carrier transport and phonon scattering control. Engineers evaluate this compound and related bismuth–lead chalcogenides for specialized cooling, power generation, and infrared detection systems where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4580 | eV/atom | — |