Bi₂N₂ is an experimental binary nitride semiconductor compound composed of bismuth and nitrogen, representing an emerging material in the nitride semiconductor family. While not yet widely commercialized, this compound is of research interest for potential optoelectronic and electronic device applications, particularly as an alternative or complement to more established nitrides like GaN and InN. Its development is motivated by the quest for wide-bandgap semiconductors with tunable properties for next-generation power electronics, UV detectors, and high-temperature applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,982.7 | ksi | — | ||
Shear Modulus(G) | 3,818.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3571 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5550 | eV/atom | — |