Bi₂As₂O₈ is a bismuth arsenate oxide ceramic compound that belongs to the family of mixed metal oxides with semiconducting properties. This material is primarily investigated in research contexts for applications requiring radiation hardness and thermal stability, as bismuth-based oxides offer potential advantages in high-energy physics detection and specialized optoelectronic devices where conventional semiconductors degrade. While not yet established in mainstream industrial production, Bi₂As₂O₈ and related bismuth arsenates are of interest to the nuclear and space engineering communities due to their resistance to radiation-induced defects compared to conventional silicon-based semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,021.6 | ksi | — | ||
Shear Modulus(G) | 7,574.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.190 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.422 | eV/atom | — |