Bi1B1 is a semiconductor compound in the boron-bismuth system, representing an intermetallic or binary compound of potential research interest. This material family is being investigated for specialized electronic and optoelectronic applications where the unique band structure and carrier properties of bismuth compounds offer advantages over conventional semiconductors. Industrial deployment remains limited, with most applications currently in laboratory research; however, bismuth-based semiconductors are of growing interest for thermoelectric devices, photovoltaic research, and specialized detector applications where bismuth's high atomic number and spin-orbit coupling provide distinct material benefits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,583 | ksi | — | ||
Shear Modulus(G) | 8,577.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1153 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8090 | eV/atom | — |