Bi1.98Te3Sb0.02

semiconductor

· Bi1.98Te3Sb0.02

Bi₁.₉₈Te₃Sb₀.₀₂ is a doped bismuth telluride compound, a member of the V–VI narrow-bandgap semiconductor family widely studied for thermoelectric applications. This antimony-doped variant is engineered to optimize charge carrier concentration and phonon scattering, making it relevant for solid-state heat pumping, power generation from waste heat, and temperature sensing in demanding thermal environments. Bismuth telluride remains the benchmark thermoelectric material for near-room-temperature operation, and dopant tuning—as seen here with Sb substitution—is a standard approach in industry to improve the figure of merit and thermal stability compared to unmodified Bi₂Te₃.

thermoelectric generatorssolid-state cooling and heat pumpswaste heat recoverytemperature control in electronicscryogenic temperature sensorsresearch and development of doped semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1400	eV	—

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Regulatory Screening

Environmental

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Bi1.98Te3Sb0.02

Electrical Properties

Regulatory Screening

Environmental

Export Control