BHfO2F

semiconductor

· BHfO2F

BHfO₂F is a rare-earth or transition-metal-doped hafnium oxide fluoride ceramic compound, belonging to the class of mixed-anion oxyfluoride semiconductors. This material represents an emerging research composition designed to combine the thermal stability and wide bandgap characteristics of hafnium oxides with the potential electronic and optical properties modulation offered by fluorine incorporation. While not yet widely deployed in established industrial applications, oxyfluoride semiconductors in this family are being investigated for next-generation photonic devices, wide-bandgap electronics, and specialized optical coatings where conventional oxides alone prove insufficient.

wide-bandgap semiconductor researchphotonic and optical deviceshigh-temperature electronicsadvanced dielectric coatingsexperimental materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.000	eV	—
Magnetic Moment(μB)	-3.697e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.260	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BHfO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control