BGeO2F

semiconductor

· BGeO2F

BGeO2F is an experimental bismuth germanate fluoride semiconductor compound combining bismuth, germanium, oxygen, and fluorine elements. This material belongs to the family of heavy-metal oxide fluorides being investigated for photonic and scintillation applications where the high atomic number elements provide strong radiation interactions. Research interest focuses on its potential for radiation detection, optical transparency windows, and non-linear optical properties—areas where the fluoride component offers improved transparency and the bismuth-germanium combination provides enhanced photon coupling compared to traditional silicate-based alternatives.

radiation detection systemsscintillator materials (research phase)optical/photonic deviceshigh-energy physics instrumentationmedical imaging detectors (developmental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	-1.056e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.720	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BGeO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control