BGaON2

ceramic

· BGaON2

BGaON₂ is an experimental oxynitride ceramic compound combining boron, gallium, oxygen, and nitrogen—a material family being investigated for wide-bandgap semiconductor and advanced ceramic applications. This composition sits at the intersection of nitride ceramics (known for hardness and thermal stability) and oxide ceramics (valued for oxidation resistance), making it of interest for next-generation optoelectronic devices, high-temperature structural applications, and potentially high-power electronics where conventional materials reach performance limits.

wide-bandgap semiconductorshigh-temperature ceramicsoptoelectronic devicesresearch and developmentadvanced refractory applicationsnext-generation electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000163	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	3.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental