BGaN3

ceramic

· BGaN3

BGaN3 is a boron-gallium nitride ceramic compound, representing a class of wide-bandgap semiconductor materials derived from the III-V nitride family. This material is primarily of research and developmental interest, explored for high-temperature, high-power electronic and optoelectronic applications where thermal stability and electrical performance are critical.

High-temperature power electronicsWide-bandgap semiconductorsRF and microwave devicesResearch and developmentThermal management in extreme environmentsNext-generation semiconductor substrates

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.997	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	3.180	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental