BeTeO₂S is an experimental ternary semiconductor compound combining beryllium, tellurium, oxygen, and sulfur elements. This material belongs to the mixed-anion semiconductor family and is primarily of research interest for optoelectronic and photonic applications, where the unique band structure arising from its compositional diversity may enable novel device performance. While not yet established in high-volume production, compounds in this material class are investigated for potential use in specialized optical sensors, UV detectors, and wide-bandgap semiconductor devices where the combination of light elements and heavy p-block elements creates tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5000 | eV | — | ||
Magnetic Moment(μB) | -0.0000141 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.480 | eV/atom | — |