BeTe is a binary semiconductor compound composed of beryllium and tellurium, belonging to the II-VI semiconductor family. It is primarily of research and development interest for optoelectronic and radiation detection applications, where its wide bandgap and crystal structure offer potential advantages in UV detection, high-temperature electronics, and specialized photonic devices. BeTe remains largely experimental compared to more mature II-VI materials like CdTe and ZnTe, making it relevant for researchers exploring next-generation semiconductor systems rather than established high-volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,509.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 6,123.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 52.23 | BTU/(hr·ft·°F) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1809 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.890 | eV | — | ||
| ↳ | 2.202 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 8.500 | - | — | ||
| ↳ | 8.535 | - | — | ||
| ↳ | 8.066 range 7.552–8.580median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.09723 | C/m² | — | ||
| ↳ | 0.4850 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -196.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4230 | eV/atom | — |