BeTe

semiconductor

· BeTe

BeTe is a binary semiconductor compound composed of beryllium and tellurium, belonging to the II-VI semiconductor family. It is primarily of research and development interest for optoelectronic and radiation detection applications, where its wide bandgap and crystal structure offer potential advantages in UV detection, high-temperature electronics, and specialized photonic devices. BeTe remains largely experimental compared to more mature II-VI materials like CdTe and ZnTe, making it relevant for researchers exploring next-generation semiconductor systems rather than established high-volume manufacturing.

UV photodetectorsHigh-temperature semiconductorsRadiation detectorsOptoelectronic researchWide-bandgap electronicsSpecialized photonic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	8,509.4	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2200	-	DFT · OptB88vdW
Shear Modulus(G)	6,123.5	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	52.23	BTU/(hr·ft·°F)	Measured

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1809	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)3 entries	2.890	eV	Measured
↳	2.202	eV	DFT · OptB88vdW
↳	2.821	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	8.535	-	DFT · OptB88vdW
↳	8.500	-	DFT · PBE
↳	8.066 range 7.552–8.580median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.472	-	DFT · OptB88vdW
↳	6.487	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.4000	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.5500	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.4850	C/m²	DFT · OptB88vdW
↳	0.09723	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00266	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00291	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-196.7	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	231.7	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	6.840	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4230	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeTe — Properties & Data | MatWorld