BeTaO2N

semiconductor

· BeTaO2N

BeTaO2N is an experimental oxynitride semiconductor compound combining beryllium, tantalum, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors, which are primarily studied in research contexts for their potential to enable wide bandgap electronics and photonic applications. The incorporation of nitrogen into tantalum oxide lattices is investigated for tuning electronic properties and creating novel device architectures not achievable with conventional oxides or nitrides alone.

wide-bandgap semiconductors (research)photonic materials (exploratory)high-temperature electronics (developmental)optoelectronic devices (research phase)advanced ceramic coatings (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—
Magnetic Moment(μB)	-0.000397	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control