BeSnO2S

semiconductor

· BeSnO2S

BeSnO₂S is an experimental quaternary semiconductor compound combining beryllium, tin, oxygen, and sulfur—a rare combination not yet established in commercial production. This material belongs to the emerging class of mixed-anion semiconductors, where the dual anionic species (oxide and sulfide) create potentially tunable bandgaps and electronic properties for optoelectronic or photovoltaic applications under research conditions.

experimental optoelectronicswide bandgap semiconductors (research)photovoltaic developmentvisible-light photocatalyststhin-film electronics (lab-stage)materials research & discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—
Magnetic Moment(μB)	0.0000324	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.240	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeSnO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control