BeSnAs2 is a ternary ceramic compound combining beryllium, tin, and arsenic elements, belonging to the family of intermetallic ceramics and semiconductor materials. This is a research-phase material with limited commercial deployment; compounds in this family are investigated for potential optoelectronic, photovoltaic, and high-frequency device applications where the combination of light elements (Be) with semiconductor-forming groups (Sn, As) may enable unusual bandgap or thermal properties. Engineers would consider BeSnAs2 or related ternary arsenides primarily in advanced materials R&D contexts rather than mature production environments, particularly where experimental high-performance semiconductors or wide-bandgap photonics are being explored.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1836 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6730 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 17.27 | - | — | ||
| ↳ | 15.09 range 14.16–16.02median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5259 | C/m² | — | ||
Seebeck Coefficient(S) | -215.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2034 | eV/atom | — |