BeSiAs₂ is a ternary ceramic compound combining beryllium, silicon, and arsenic elements. This material belongs to the family of advanced ceramics with mixed-valence cation structures and is primarily investigated in research contexts for its potential semiconductor and optoelectronic properties. While not widely established in mainstream industrial production, compounds in this chemical family are of interest for specialized applications requiring specific electronic or thermal characteristics in extreme environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1448 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.193 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 11.97 | - | — | ||
| ↳ | 11.44 range 10.98–11.90median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.4538 | C/m² | — | ||
Seebeck Coefficient(S) | -224.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2350 | eV/atom | — |