BeScO2F
semiconductorBeScO₂F is an experimental mixed-metal oxide fluoride compound combining beryllium, scandium, oxygen, and fluorine—a rare composition not yet established in commercial production. This material belongs to the family of complex fluoride ceramics and represents emerging research into ultra-wide bandgap semiconductors, with potential applications in high-temperature, high-voltage, or radiation-resistant electronic devices where conventional semiconductors fail. The incorporation of fluorine and multiple metal cations suggests exploration of novel defect engineering and phonon engineering pathways, though practical applications remain largely theoretical pending demonstration of viable synthesis routes and device integration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |