BeScN3

semiconductor

· BeScN3

BeScN3 is an experimental ternary nitride semiconductor compound combining beryllium, scandium, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and represents early-stage research into multi-element nitride systems that could offer novel electronic and optical properties beyond conventional binary nitrides like GaN or AlN. As a research compound, BeScN3 is of primary interest to materials scientists and semiconductor device researchers exploring new material platforms for high-power, high-frequency, or UV-wavelength applications, though industrial maturity and scalable synthesis routes remain to be established.

wide-bandgap semiconductor researchhigh-power electronics developmentUV optoelectronics explorationadvanced nitride materialsexperimental device structuresmaterials science databases

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	—
Magnetic Moment(μB)	0.00000695	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.720	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeScN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control