BeMgO2S

semiconductor

· BeMgO2S

BeMgO₂S is an experimental quaternary semiconductor compound combining beryllium, magnesium, oxygen, and sulfur elements. This material belongs to the mixed-anion semiconductor family and is primarily of research interest for optoelectronic and photovoltaic applications where wide bandgap semiconductors with tunable electronic properties are needed. Its mixed oxide-sulfide composition offers potential advantages in light emission, photodetection, or energy conversion, though it remains largely in academic development with limited industrial deployment compared to established alternatives like GaN or CdTe.

Experimental optoelectronic devicesWide-bandgap semiconductorsPhotovoltaic researchUV photodetectorsLight-emitting devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	—
Magnetic Moment(μB)	-0.0000289	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.100	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeMgO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control