BeInP

ceramic
· JVASP-71451· BeInP

BeInP is a III-V semiconductor ceramic compound composed of beryllium, indium, and phosphorus, belonging to the family of wide-bandgap semiconductopic materials. This material is primarily of research and developmental interest for high-frequency optoelectronic and RF device applications where its wide bandgap and thermal properties offer advantages over conventional GaAs or InP semiconductors. BeInP remains largely experimental due to beryllium's toxicity and processing challenges, but the material family is pursued for specialized applications requiring extreme thermal stability, high-frequency operation, or radiation hardness in aerospace and defense contexts.

High-frequency semiconductorsOptoelectronic devicesSpace/radiation-hardened electronicsRF integrated circuitsResearch/experimental compoundsThermal management applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
Pa
Poisson's Ratio(ν)
-
Shear Modulus(G)
Pa
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Magnetic Moment(μB)
µB
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.