BeInP is a III-V semiconductor ceramic compound composed of beryllium, indium, and phosphorus, belonging to the family of wide-bandgap semiconductopic materials. This material is primarily of research and developmental interest for high-frequency optoelectronic and RF device applications where its wide bandgap and thermal properties offer advantages over conventional GaAs or InP semiconductors. BeInP remains largely experimental due to beryllium's toxicity and processing challenges, but the material family is pursued for specialized applications requiring extreme thermal stability, high-frequency operation, or radiation hardness in aerospace and defense contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 57.07 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 36.10 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.432 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03580 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1300 | eV/atom | — |