BeInN3

ceramic

· BeInN3

BeInN3 is an advanced ceramic compound combining beryllium, indium, and nitrogen—a material under active research exploration rather than established production use. This composition places it in the wide-bandgap semiconductor and ceramic family, with potential applications in high-temperature, high-power electronic devices where extreme thermal stability and wide bandgap properties are advantageous. Engineers would consider BeInN3 primarily for next-generation optoelectronic or RF power applications where conventional semiconductors reach performance limits, though material availability, manufacturing maturity, and the toxicity profile of beryllium require careful evaluation against mature alternatives.

wide-bandgap semiconductorshigh-temperature electronicsRF power devicesresearch/emerging materialsoptoelectronic substratesextreme environment applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000635	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental