BeHfO3 is an experimental mixed-oxide semiconductor compound combining beryllium and hafnium oxides, belonging to the rare-earth and refractory oxide family. This material remains largely in research phase, investigated for potential applications in high-temperature electronics, advanced dielectrics, and wide-bandgap semiconductor devices where hafnium oxide's established high-κ dielectric properties and beryllium's low neutron absorption cross-section could be exploited synergistically. Engineers considering this material should note it is not yet commercially established; interest centers on fundamental research into novel oxide semiconductors for extreme environment applications and next-generation microelectronic or nuclear-adjacent device concepts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 1.800 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | -0.00147 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.942 | eV/atom | — | ||
| ↳ | 1.500 | eV/atom | — |