BeHfO3

semiconductor
· BeHfO3

BeHfO3 is an experimental mixed-oxide semiconductor compound combining beryllium and hafnium oxides, belonging to the rare-earth and refractory oxide family. This material remains largely in research phase, investigated for potential applications in high-temperature electronics, advanced dielectrics, and wide-bandgap semiconductor devices where hafnium oxide's established high-κ dielectric properties and beryllium's low neutron absorption cross-section could be exploited synergistically. Engineers considering this material should note it is not yet commercially established; interest centers on fundamental research into novel oxide semiconductors for extreme environment applications and next-generation microelectronic or nuclear-adjacent device concepts.

high-temperature semiconductor researchwide-bandgap electronicsadvanced dielectric materialsnuclear/radiation environmentsexperimental device physics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
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Band Gap(Eg)2 entries
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Magnetic Moment(μB)2 entries
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N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
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Formation Energy(ΔHf)2 entries
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N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.