BeGeAs₂ is a quaternary ceramic compound combining beryllium, germanium, and arsenic elements, representing an advanced material in the chalcogenide and semiconductor ceramic family. This material is primarily of research and developmental interest for optoelectronic and photonic applications where its wide bandgap and crystalline structure offer potential advantages in infrared transmission, nonlinear optical devices, and high-frequency semiconductor applications. Engineers consider BeGeAs₂ for specialized photonic systems where conventional semiconductors or glasses are insufficient, though industrial adoption remains limited compared to established alternatives like GaAs or ZnSe due to material maturity and manufacturing challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,209.2 | ksi | — | ||
Poisson's Ratio(ν) | 0.2000 | - | — | ||
Shear Modulus(G) | 7,752.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1713 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6770 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 14.88 | - | — | ||
| ↳ | 13.75 range 13.20–14.29median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.4162 | C/m² | — | ||
Seebeck Coefficient(S) | -181.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1997 | eV/atom | — |