BeGaSe is a ternary ceramic compound combining beryllium, gallium, and selenium, belonging to the family of wide-bandgap semiconductors and compound ceramics. This material remains primarily in research and development phases, investigated for optoelectronic and high-frequency electronic applications where its semiconductor properties and thermal stability could offer advantages over more conventional binary compounds. Engineers considering BeGaSe would do so in advanced research contexts, particularly where the unique electronic properties of ternary semiconductor systems might enable performance benefits in specialized photonic or RF device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.22 | GPa | — | ||
Poisson's Ratio(ν) | 0.3900 | - | — | ||
Shear Modulus(G) | 17.37 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.166 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.159 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.5392 | eV/atom | — |