BeGaP2

ceramic

· JVASP-71508· BeGaP2

BeGaP₂ is an experimental III-V semiconductor ceramic compound combining beryllium, gallium, and phosphorus. While not widely commercialized, it belongs to the family of wide-bandgap semiconductors and phosphide compounds explored for high-temperature and high-frequency electronic applications where superior thermal stability and radiation resistance are required.

wide-bandgap semiconductorshigh-temperature electronicsradiation-hardened devicesresearch/developmental compoundoptoelectronic substratesaerospace electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1377	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.7433	eV/atom	—
Formation Energy(ΔHf)	0.4418	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeGaP2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental