BeGaO2N

ceramic

· BeGaO2N

BeGaO2N is an experimental wide-bandgap ceramic compound combining beryllium, gallium, oxygen, and nitrogen—a member of the oxynitride family being explored for advanced semiconductor and optoelectronic applications. This material remains primarily in research development rather than established production, with potential relevance to high-temperature electronics, UV devices, and power conversion systems where its wide bandgap and thermal stability could offer advantages over more conventional semiconductors like GaN or SiC.

Wide-bandgap semiconductorsHigh-temperature electronicsUV optoelectronicsPower device researchThermal barrier coatings (exploratory)Next-generation compound semiconductors

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental